Manufacturer Part Number
IRF200P222
Manufacturer
Infineon Technologies
Introduction
The IRF200P222 is a high-performance, N-channel power MOSFET from Infineon Technologies, designed for a wide range of power management and switching applications.
Product Features and Performance
Robust and reliable MOSFET construction
Optimized for high-efficiency and high-power applications
Low on-resistance (RDS(on)) for reduced power losses
High avalanche energy rating for improved reliability
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent thermal management and heat dissipation
High current handling capability
Fast switching and low gate charge for efficient operation
Robust design for reliable performance in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (VDS): 200V
Maximum Gate-to-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 6.6mΩ @ 82A, 10V
Continuous Drain Current (ID): 182A @ 25°C (Tc)
Input Capacitance (Ciss): 9820pF @ 50V
Power Dissipation (Pd): 556W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and safety standards
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Converters
Industrial automation and control systems
Product Lifecycle
The IRF200P222 is an active product and currently available
Potential replacements or upgrades may be considered in the future as technology evolves
Several Key Reasons to Choose This Product
Exceptional performance and efficiency
Robust and reliable design for demanding applications
Versatile compatibility across various power electronics systems
Proven track record of quality and safety
Availability and support from a trusted semiconductor manufacturer, Infineon Technologies
IRF2204IR