Manufacturer Part Number
IRF200P223
Manufacturer
Infineon Technologies
Introduction
The IRF200P223 is a high-performance, N-channel power MOSFET transistor designed for use in a variety of power management applications.
Product Features and Performance
High current handling capability of up to 100A continuous drain current at 25°C
Low on-state resistance (Rds(on)) of 11.5mΩ at 60A, 10V
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge for efficient operation
Robust design and high reliability
Product Advantages
Excellent thermal performance and power dissipation
Efficient power conversion and low power losses
Suitable for high-current, high-voltage applications
Reliable and durable construction
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±20V
Input Capacitance (Ciss): 5094pF @ 50V
Power Dissipation (Tc): 313W
Quality and Safety Features
RoHS3 compliant
Manufactured in accordance with high-quality standards
Compatibility
The IRF200P223 is compatible with a wide range of power electronics applications and can be used as a replacement for similar power MOSFET devices.
Application Areas
Switching power supplies
Motor drives
Inverters
Power amplifiers
Industrial automation
Renewable energy systems
Product Lifecycle
The IRF200P223 is an active and widely available product. Infineon Technologies continues to support this product, and there are no plans for discontinuation in the near future.
Key Reasons to Choose This Product
High current handling and low on-state resistance for efficient power conversion
Wide operating temperature range for versatile applications
Fast switching speed and low gate charge for high-frequency operation
Robust and reliable design for long-term performance
RoHS3 compliance for environmentally friendly use
IRF2002IR
IRF200P223 MOSCypress Semiconductor (Infineon Technologies)