Manufacturer Part Number
IRF200B211
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
High voltage rating of 200V
Low on-resistance of 170mΩ
Continuous drain current of 12A at 25°C
Wide operating temperature range of -55°C to 175°C
High power dissipation of 80W
Fast switching speed with low gate charge of 23nC
Product Advantages
Robust and reliable performance
Efficient power management
Suitable for high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 170mΩ
Continuous Drain Current (Id): 12A
Input Capacitance (Ciss): 790pF
Power Dissipation (Pd): 80W
Threshold Voltage (Vgs(th)): 4.9V
Quality and Safety Features
RoHS 3 compliant
TO-220AB package for secure mounting and heat dissipation
Compatibility
Suitable for a wide range of high-voltage and high-current applications
Application Areas
Power supplies
Motor drives
Switching regulators
Amplifiers
Inverters
Product Lifecycle
Mature product, no indication of discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent performance and reliability
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Compact and easy-to-use TO-220AB package
Compliant with RoHS 3 regulations
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