Manufacturer Part Number
IPW60R070P6
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in TO-247-3 package
Product Features and Performance
Low on-resistance: 70 mΩ
High blocking voltage: 600 V
High continuous drain current: 53.5 A
Wide operating temperature range: -55°C to 150°C
Low gate charge: 100 nC
High power dissipation: 391 W
Product Advantages
Excellent efficiency and low switching losses
Robust and reliable design
Suitable for high-power, high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600 V
Maximum Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 70 mΩ
Continuous Drain Current (Id): 53.5 A
Input Capacitance (Ciss): 4750 pF
Gate Charge (Qg): 100 nC
Quality and Safety Features
Meets high-reliability standards
Robust and durable design
Overcurrent and overvoltage protection
Compatibility
Suitable for a wide range of high-power, high-voltage applications
Can be used in various power conversion and control systems
Application Areas
Power supplies
Motor drives
Switching mode power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent efficiency and low switching losses for improved system performance
Robust and reliable design for long-term use
High power handling capability for high-power, high-voltage applications
Wide operating temperature range for versatile use
Compatibility with various power conversion and control systems