Manufacturer Part Number
IPW60R070C6FKSA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance, N-channel MOSFET transistor from Infineon Technologies' CoolMOS series.
Product Features and Performance
600V drain-source voltage
70mΩ maximum on-resistance
53A maximum continuous drain current
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 3800pF
Maximum power dissipation of 391W
Product Advantages
Excellent efficiency and low switching losses
Robust and reliable performance
Suitable for high-power, high-frequency switching applications
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 70mΩ
Drain current (Id): 53A
Input capacitance (Ciss): 3800pF
Power dissipation (Ptot): 391W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for secure installation
Compatibility
This MOSFET is a direct replacement for similar N-channel MOSFET devices in high-power, high-frequency switching applications.
Application Areas
Switch-mode power supplies
Motor drives
Induction heating
Welding equipment
Industrial and medical electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Excellent efficiency and low switching losses for improved system performance
Robust and reliable performance for long-term operation
Suitable for a wide range of high-power, high-frequency switching applications
RoHS3 compliance for environmental responsibility
Compatibility with similar MOSFET devices for easy replacement
