Manufacturer Part Number
IPW60R070CFD7XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET in TO-247-3 package
Product Features and Performance
650V drain-source voltage
Very low on-state resistance of 70mΩ
High current capability of 31A continuous drain current
Fast switching characteristics
Optimized for hard-switching applications
Product Advantages
Improved efficiency through low on-state resistance
Reduced power losses
Reliable operation in high-voltage and high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 70mΩ
Continuous Drain Current (Id): 31A
Input Capacitance (Ciss): 2721pF
Power Dissipation (Ptot): 156W
Quality and Safety Features
RoHS3 compliant
Meets high-reliability requirements
Suitable for harsh environments (-55°C to 150°C)
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial electronics
Renewable energy systems
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent performance and efficiency through low on-state resistance
High current capability and reliable operation
Suitable for high-voltage and high-power applications
Compact and easy-to-use TO-247-3 package
