Manufacturer Part Number
IPW60R060P7XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with CoolMOS™ P7 technology
Product Features and Performance
600V drain-source voltage
Very low on-state resistance
High current capability up to 48A
Fast switching and low gate charge
Optimized for high-efficiency power conversion applications
Product Advantages
Improved energy efficiency
Reduced system cooling requirements
Compact design and layout flexibility
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 60mΩ @ 15.9A, 10V
Continuous Drain Current (Id): 48A @ 25°C (Tc)
Input Capacitance (Ciss): 2895pF @ 400V
Power Dissipation (Tc): 164W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
TO-247-3 package
Application Areas
Switched-mode power supplies
Motor drives
Lighting applications
Solar inverters
Uninterruptible power supplies (UPS)
Product Lifecycle
The IPW60R060P7XKSA1 is an actively supported product. Infineon continues to manufacture and provide support for this device.
Key Reasons to Choose This Product
Excellent energy efficiency through low on-state resistance
High current capability up to 48A
Fast switching and low gate charge for high-frequency power conversion
Compact TO-247-3 package for design flexibility
Automotive-qualified for reliable performance in harsh environments
Actively supported product with ongoing availability and technical support from Infineon
