Manufacturer Part Number
IPW60R017C7XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Designed for efficient power conversion applications
Product Features and Performance
600V drain-to-source voltage rating
17mΩ maximum on-resistance
109A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 9890pF
High power dissipation of 446W
Product Advantages
Excellent performance in switching applications
High efficiency and low power losses
Robust and reliable design
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 17mΩ
Continuous drain current (Id): 109A
Input capacitance (Ciss): 9890pF
Power dissipation (Tc): 446W
Quality and Safety Features
RoHS3 compliant
TO-247-3 package with reliable through-hole mounting
Compatibility
Suitable for a wide range of power conversion applications, such as:
- Switched-mode power supplies
- Motor drives
- Inverters
- Welding equipment
- Industrial automation and control
Application Areas
High-efficiency power conversion
Industrial and commercial electronics
Renewable energy systems
Electric vehicles and hybrid electric vehicles
Product Lifecycle
This product is an active and available part in Infineon's portfolio.
Replacement or upgrade options may be available, depending on specific application requirements.
Key Reasons to Choose This Product
High efficiency and low power losses for improved system performance
Robust and reliable design for long-term operation
Broad compatibility with various power conversion applications
RoHS3 compliance for environmental sustainability
Availability and support from a reputable manufacturer, Infineon Technologies
IPW60R024P7XKSA1Infineon TechnologiesMOSFET N-CH 650V 101A TO247-3-41