Manufacturer Part Number
IPW60R031CFD7XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with CoolMOS CFD7 technology
Product Features and Performance
650V breakdown voltage
Very low on-resistance of 31mΩ
High current capability of 63A (at 25°C)
Extremely low gate charge for high-frequency switching
Low input capacitance for high-efficiency power conversion
Product Advantages
Excellent performance in high-frequency, high-power applications
Increased power density and efficiency
Superior thermal management
Key Technical Parameters
Vdss: 650V
Vgs (Max): ±20V
Rds(on) (Max): 31mΩ @ 32.6A, 10V
Id (Continuous): 63A (at 25°C)
Ciss (Max): 5623pF @ 400V
Power Dissipation (Max): 278W (at Tc)
Vgs(th) (Max): 4.5V @ 1.63mA
Qg (Max): 141nC @ 10V
Quality and Safety Features
ROHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with high-frequency, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction
Telecom and industrial power systems
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
Excellent performance in high-frequency, high-power applications
Improved power density and efficiency
Superior thermal management capabilities
Reliable and safe operation
Compatibility with a wide range of high-power switching applications
