Manufacturer Part Number
IPW60R037P7XKSA1
Manufacturer
Infineon Technologies
Introduction
The IPW60R037P7XKSA1 is a high-performance N-Channel MOSFET transistor from Infineon Technologies' CoolMOS P7 series, designed for a wide range of power conversion applications.
Product Features and Performance
650V drain-to-source voltage
37mΩ maximum on-resistance at 10V gate-source voltage
76A continuous drain current at 25°C case temperature
255W maximum power dissipation at 25°C case temperature
Low gate charge of 121nC at 10V gate-source voltage
Wide operating temperature range of -55°C to 150°C
Product Advantages
Improved efficiency and reduced power losses due to low on-resistance
Enhanced thermal performance for high-power applications
Robust design for reliable operation
Suitable for high-voltage, high-current power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 37mΩ @ 29.5A, 10V
Continuous Drain Current (Id): 76A @ 25°C
Input Capacitance (Ciss): 5243pF @ 400V
Power Dissipation (Pd): 255W @ 25°C
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for reliable connections
Compatibility
This MOSFET is suitable for use in a wide range of power conversion applications, including:
Switch-mode power supplies
Inverters
Motor drives
Power factor correction circuits
Application Areas
Industrial and commercial power electronics
Renewable energy systems
Automotive electronics
Home appliances
Product Lifecycle
The IPW60R037P7XKSA1 is an actively supported product in Infineon's portfolio. Replacement or upgrade options may be available as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and low power losses due to low on-resistance
Robust and reliable design for high-power, high-voltage applications
Wide operating temperature range for versatile use
Compatibility with a variety of power conversion applications
RoHS3 compliance for environmentally-friendly design