Manufacturer Part Number
IPW60R041P6FKSA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-channel MOSFET transistor from the CoolMOS P6 series, suitable for a wide range of power conversion applications.
Product Features and Performance
600V drain-to-source voltage
41mΩ maximum on-resistance at 35.5A and 10V gate-to-source voltage
5A maximum continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 8180pF at 100V
481W maximum power dissipation at 25°C case temperature
Product Advantages
Excellent power efficiency due to low on-resistance
High power density and compact design
Reliable operation across wide temperature range
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 41mΩ
Continuous Drain Current (Id): 77.5A
Input Capacitance (Ciss): 8180pF
Power Dissipation (Ptot): 481W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for reliable connections
Designed for safe and reliable operation
Compatibility
This MOSFET is compatible with a wide range of power conversion and control applications, including:
Switch-mode power supplies
Motor drives
Inverters
Converters
Application Areas
High-voltage, high-current power conversion
Industrial automation and control
Renewable energy systems
Household appliances
Product Lifecycle
This MOSFET is an active product in the Infineon Technologies portfolio, with no plans for discontinuation. Replacement or upgrade options may become available in the future as technology advances.
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved power conversion performance
Wide operating temperature range for versatile applications
Compact and reliable through-hole package design
Suitable for high-voltage, high-current power conversion applications
RoHS3 compliance for environmental responsibility
