IPW50R190CE - Infineon Technologies

Manufacturer Part Number

IPW50R190CE

Manufacturer

Infineon Technologies

Introduction

The IPW50R190CE is a high-performance N-channel MOSFET transistor from Infineon Technologies' CoolMOS series, designed for power conversion and control applications.

Product Features and Performance

Drain to Source Voltage (Vdss) of 500 V

Low on-resistance (Rds(on)) of 190 mΩ @ 6.2 A, 13 V

Continuous Drain Current (Id) of 24.8 A at 25°C (Tc)

Wide operating temperature range of -55°C to 150°C (TJ)

Low input capacitance (Ciss) of 1137 pF @ 100 V

Maximum Power Dissipation of 152 W (Tc)

Product Advantages

Efficient power conversion with low conduction losses

High-voltage operation capability

Compact design with through-hole mounting

Reliable performance across a wide temperature range

Key Technical Parameters

Vgs (Max): ±20 V

Vgs(th) (Max) @ Id: 3.5 V @ 510 A

Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On): 13 V

Quality and Safety Features

RoHS3 compliant

PG-TO247-3-41 package

Compatibility

Suitable for power conversion and control applications

Application Areas

Switching power supplies

Motor drives

Industrial automation

Renewable energy systems

Product Lifecycle

The IPW50R190CE is an active product in Infineon's portfolio and is not nearing discontinuation.

Upgrades and replacements may be available in the future as technology advances.

Several Key Reasons to Choose This Product

Excellent power efficiency and low conduction losses

High-voltage operation capability for demanding applications

Reliable performance across a wide temperature range

Compact and through-hole mounting design for easy integration

RoHS3 compliance for environmental responsibility