Manufacturer Part Number
IPW50R299CP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching characteristics.
Product Features and Performance
500V drain-to-source voltage capability
Low on-resistance of 299mΩ
High current handling up to 12A continuous
Fast switching with low gate charge of 31nC
Wide operating temperature range from -55°C to 150°C
Excellent reliability and robustness
Product Advantages
Efficient power conversion in high-voltage applications
Reduced power losses and improved system efficiency
Compact design with high power density
Reliable operation in challenging environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 299mΩ @ 6.6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 1190pF @ 100V
Power Dissipation (Pd): 104W @ 25°C
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package design
Meets industrial quality and reliability standards
Compatibility
Compatible with a wide range of high-voltage, high-power applications.
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Solar inverters
Product Lifecycle
This product is actively supported by Infineon Technologies and is not nearing discontinuation. Replacement or upgrade options may be available as technology advances.
Key Reasons to Choose This Product
High efficiency and low power losses
Excellent reliability and robustness
Wide operating temperature range
Compact and versatile design
Proven performance in demanding applications
