Manufacturer Part Number
IPP50R350CP
Manufacturer
Infineon Technologies
Introduction
The IPP50R350CP is a high-performance N-channel MOSFET from Infineon Technologies, designed for a wide range of power conversion and control applications.
Product Features and Performance
Operates in the temperature range of -55°C to 150°C (TJ)
Drain-to-Source Voltage (Vdss) of 500V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
Low On-State Resistance (Rds(on)) of 350mΩ @ 5.6A, 10V
Continuous Drain Current (Id) of 10A at 25°C (Tc)
Input Capacitance (Ciss) of 1020pF @ 100V
Maximum Power Dissipation of 89W at Tc
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Wide operating temperature range
Robust and reliable performance
Key Technical Parameters
N-Channel MOSFET Technology
Threshold Voltage (Vgs(th)) of 3.5V @ 370A
Gate Charge (Qg) of 25nC @ 10V
Through-Hole Mounting
Quality and Safety Features
RoHS3 Compliant
Encased in a PG-TO220-3-1 package
Compatibility
This MOSFET is suitable for a wide range of power conversion and control applications, including:
Switch-mode power supplies
Motor drives
Lighting ballasts
Welding equipment
Industrial automation and control systems
Application Areas
Power conversion and control
Industrial electronics
Automotive electronics
Consumer electronics
Product Lifecycle
The IPP50R350CP is an active product, and Infineon Technologies continues to support and provide replacements or upgrades as needed.
Key Reasons to Choose This Product
High voltage and current handling capabilities for a wide range of applications
Low on-state resistance for improved energy efficiency
Wide operating temperature range for reliable performance in demanding environments
Robust and reliable design for long-term usage
RoHS3 compliance for environmentally-friendly applications
