Manufacturer Part Number
IPP50R190CE
Manufacturer
Infineon Technologies
Introduction
High voltage N-channel MOSFET transistor with low on-resistance and high current capability.
Product Features and Performance
Operates at high voltage up to 500V
Low on-resistance of 190mOhm
Continuous drain current up to 28.8A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed with low gate charge of 47.2nC
CoolMOS technology for high efficiency and low losses
Product Advantages
Ideal for high power switching applications
Excellent thermal performance
High reliability and ruggedness
Optimized for efficient power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 190mOhm
Drain Current (Id): 28.8A
Quality and Safety Features
Compliant with RoHS and REACH regulations
Robust design for high reliability
Rigorous testing and quality control
Compatibility
Suitable for various high power switching applications
Can be used in power supplies, motor drives, and inverters
Application Areas
Switch-mode power supplies
Motor drives and industrial automation
Inverters and renewable energy systems
High power switching applications
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements or upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
High voltage and current capability
Excellent efficiency and low power losses
Reliable and rugged design for long-term operation
Optimized for high-performance power conversion
Suitable for a wide range of high-power applications
