Manufacturer Part Number
IPP50R299CP
Manufacturer
Infineon Technologies
Introduction
The IPP50R299CP is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C (TJ)
High drain-to-source voltage of 500V
Low on-resistance of 299mΩ at 6.6A, 10V
High continuous drain current of 12A at 25°C (Tc)
Low input capacitance of 1190pF at 100V
High power dissipation of 104W at Tc
Product Advantages
Excellent efficiency and low switching losses
Robust and reliable performance
Wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 299mΩ @ 6.6A, 10V
Continuous Drain Current (Id): 12A @ 25°C (Tc)
Input Capacitance (Ciss): 1190pF @ 100V
Power Dissipation (Ptot): 104W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Through-hole mounting
Application Areas
Switching power supplies
Motor drives
Industrial electronics
Telecom equipment
Automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and low switching losses
Robust and reliable performance
Wide operating temperature range
High voltage and current handling capabilities
Compact through-hole package