Manufacturer Part Number
IPP50R399CP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with CoolMOS technology
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 560V
On-State Resistance (Rds(on)) of 399mOhm @ 4.9A, 10V
Continuous Drain Current (Id) of 9A @ 25°C
Operating Temperature Range of -55°C to 150°C
Power Dissipation (Tc) of 83W
Product Advantages
Excellent switching performance with low conduction and switching losses
Robust and reliable design for demanding applications
Optimized for high-frequency, high-efficiency power conversion
Key Technical Parameters
Vgs(th) (Max) of 3.5V @ 330A
Input Capacitance (Ciss) of 890pF @ 100V
Gate Charge (Qg) of 23nC @ 10V
Quality and Safety Features
Compliant with RoHS and REACH directives
Stringent quality control and testing procedures
Compatibility
Suitable for a wide range of power electronics and industrial applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Appliances
Renewable energy systems
Product Lifecycle
Current product offering, no discontinuation plans
Several Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Robust and reliable design for demanding applications
Optimized for high-frequency, high-efficiency power conversion
Broad compatibility and suitability for various power electronics applications