Manufacturer Part Number
IPP024N06N3G
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET
Suitable for high-power switching applications
Product Features and Performance
Low on-resistance of 2.4 mΩ
High continuous drain current of 120A
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 23,000 pF
High power dissipation of 250W
Product Advantages
Excellent performance for high-power switching
Efficient heat dissipation due to low on-resistance
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.4 mΩ
Continuous Drain Current (Id): 120A
Input Capacitance (Ciss): 23,000 pF
Power Dissipation (Tc): 250W
Quality and Safety Features
Robust design for reliable operation
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Motor drives
Inverters
Power supplies
Welding equipment
Industrial automation
Product Lifecycle
This product is currently in production and widely available
No known plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power switching
Reliable operation in harsh environments
Efficient heat dissipation due to low on-resistance
Suitable for a wide range of high-power applications
IPP024N08NF2SCypress Semiconductor (Infineon Technologies)