Manufacturer Part Number
IPP023NE7N3G
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a transistor in the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) category.
Product Features and Performance
N-Channel MOSFET with a drain-to-source voltage (Vdss) of 75V
Capable of handling a continuous drain current (Id) of 120A at 25°C
Low on-resistance (Rds(on)) of 2.3mOhm at 100A and 10V
Wide operating temperature range of -55°C to 175°C
High input capacitance (Ciss) of 14400pF at 37.5V
Maximum power dissipation of 300W at Tc
Product Advantages
Excellent performance in high-current, high-power applications
Robust design with wide temperature range
Efficient power handling with low on-resistance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 75V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.3mOhm @ 100A, 10V
Continuous Drain Current (Id): 120A @ 25°C
Input Capacitance (Ciss): 14400pF @ 37.5V
Power Dissipation (Tc): 300W
Quality and Safety Features
Manufactured using Infineon's reliable MOSFET technology
Meets industry safety and quality standards
Compatibility
Compatible with a wide range of high-power, high-current applications
Application Areas
Suitable for use in power supplies, motor drives, industrial controls, and other high-power electronic systems
Product Lifecycle
This product is an active and widely available component from Infineon Technologies.
Key Reasons to Choose This Product
Excellent performance in high-current, high-power applications
Robust design with wide operating temperature range
Efficient power handling with low on-resistance
Reliable and high-quality manufacturing from Infineon Technologies
Compatibility with a wide range of high-power, high-current applications
IPP023N04NCypress Semiconductor (Infineon Technologies)