Manufacturer Part Number
IPP023N10N5AKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance n-channel MOSFET transistor with low on-resistance and high current handling capability.
Product Features and Performance
High power density with low on-resistance of 2.3 mΩ
Very low gate charge of 210 nC for efficient switching
Wide operating temperature range of -55°C to 175°C
High drain-to-source voltage rating of 100 V
Capable of handling continuous drain current of up to 120 A at 25°C
Product Advantages
Excellent power efficiency due to low on-resistance
Fast and efficient switching performance
Wide temperature range for use in harsh environments
High current capability for demanding applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 2.3 mΩ @ 100 A, 10 V
Continuous Drain Current (Id): 120 A @ 25°C
Input Capacitance (Ciss): 15,600 pF @ 50 V
Power Dissipation (Pd): 375 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Robust TO-220-3 package for reliable operation
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters and converters
Industrial automation equipment
Automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and switching performance
High current capability and wide temperature range
Robust and reliable packaging for demanding applications
Compatibility with a wide range of electronic systems
Availability and potential for future replacements or upgrades
