Manufacturer Part Number
IPP023N08N5AKSA1
Manufacturer
Infineon Technologies
Introduction
The IPP023N08N5AKSA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies, part of the OptiMOS series.
Product Features and Performance
High drain current capability of 120A continuous at 25°C
Low on-resistance of 2.3 milliohms
Wide operating temperature range of -55°C to 175°C
High voltage rating of 80V drain-to-source
Fast switching with low gate charge of 166nC
Product Advantages
Excellent power handling and efficiency
Reliable high-temperature operation
Suitable for high-current, high-voltage applications
Optimized for low power loss
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.3 milliohms
Continuous Drain Current (Id): 120A
Input Capacitance (Ciss): 12,100pF
Power Dissipation: 300W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Through-hole TO-220-3 package
Compatible with various high-power electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive electronics
Inverters and converters
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from Infineon
Key Reasons to Choose
Excellent power handling and efficiency
Reliable high-temperature operation
Optimized for low power loss
Suitable for high-current, high-voltage applications
Availability of replacements and upgrades
