Manufacturer Part Number
IPD90P03P4L04ATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a P-channel MOSFET transistor from Infineon's OptiMOS automotive series, designed for high-power switching applications.
Product Features and Performance
AEC-Q101 qualified for automotive use
Low on-resistance (RDS(on)) of 4.1 mOhm at 90A, 10V
High current rating of 90A continuous drain current at 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge of 160 nC at 10V
High breakdown voltage of 30V
Product Advantages
Optimized for high-efficiency power conversion
Robust and reliable performance in harsh automotive environments
Compact DPak (TO-252-3) package for space-saving design
Key Technical Parameters
Drain-Source Voltage (VDS): 30V
Gate-Source Voltage (VGS): +5V/-16V
On-Resistance (RDS(on)): 4.1 mOhm at 90A, 10V
Drain Current (ID): 90A continuous at 25°C
Input Capacitance (Ciss): 11300 pF at 25V
Power Dissipation (Ptot): 137W at Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
This MOSFET is compatible with a wide range of automotive and industrial applications that require high-power switching.
Application Areas
Automotive power electronics (e.g., motor drives, power converters)
Industrial power supplies and inverters
High-power switching applications
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon's product portfolio.
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power switching applications
Robust and reliable operation in harsh automotive environments
Compact package design for space-saving PCB layouts
AEC-Q101 qualification for automotive use
Excellent thermal management with low on-resistance and high power dissipation
IPD90N08S4-05VBSEMI