Manufacturer Part Number
IPD90R1K2C3ATMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-performance MOSFET for switch mode power supplies and motor drives
Product Features and Performance
900V breakdown voltage
Low on-resistance of 1.2Ω
High current capability of 5.1A continuous drain current
Low gate charge of 28nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion with low conduction losses
Robust and reliable performance
Compact design for space-constrained applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 900V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.2Ω @ 2.8A, 10V
Continuous Drain Current (Id): 5.1A @ 25°C
Input Capacitance (Ciss): 710pF @ 100V
Power Dissipation (Ptot): 83W @ 25°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with various power supply and motor drive designs
Application Areas
Switch mode power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available for purchase
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent power conversion efficiency with low conduction losses
Robust and reliable performance across a wide temperature range
Compact design for space-constrained applications
Suitable for a variety of power supply and motor drive designs
IPD90P03P4-04 MOSCypress Semiconductor (Infineon Technologies)