Manufacturer Part Number
IPD90N06S4L06ATMA2
Manufacturer
Infineon Technologies
Introduction
This product is a single N-Channel MOSFET transistor from Infineon's OptiMOS series, designed for automotive applications and meeting the AEC-Q101 qualification standard.
Product Features and Performance
60V Drain-Source Voltage (Vdss)
90A Continuous Drain Current (Id) at 25°C
3mΩ Maximum On-Resistance (Rds(on)) at 90A, 10V
5680pF Maximum Input Capacitance (Ciss) at 25V
79W Maximum Power Dissipation at 25°C
Operating Temperature Range: -55°C to 175°C
Product Advantages
Optimized for high efficiency and low losses in automotive applications
Meets AEC-Q101 automotive qualification standard
Robust design for reliable operation in harsh environments
Key Technical Parameters
N-Channel MOSFET
60V Drain-Source Voltage
±16V Gate-Source Voltage
2V Maximum Gate Threshold Voltage at 40A
5V to 10V Drive Voltage Range
75nC Maximum Gate Charge at 10V
Quality and Safety Features
RoHS3 compliant
Automotive-grade design and manufacturing
Compatibility
Suitable for a wide range of automotive and industrial applications requiring high-power, high-efficiency switching
Application Areas
Automotive power management and control systems
Industrial motor drives and power converters
General-purpose high-power switching applications
Product Lifecycle
This product is an active, in-production component from Infineon
Replacement or upgrade options may be available from Infineon or other manufacturers
Key Reasons to Choose This Product
Optimized performance and efficiency for automotive applications
Robust and reliable design meeting AEC-Q101 standards
Wide operating temperature range and high power handling capability
Compact and easy-to-integrate TO-252-3 (D-Pak) package
IPD90N08S4-05VBSEMI