Manufacturer Part Number
IPD90N06S4L-05
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor designed for power electronics applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 4.6 mΩ at 90 A, 10 V
High continuous drain current (ID) of 90 A at 25°C
Supports operating temperatures from -55°C to 175°C
Low input capacitance (Ciss) of 8,180 pF at 25 V
Maximum power dissipation of 107 W at 25°C
Product Advantages
Excellent power handling and efficiency
Reliable high-temperature operation
Compact and efficient package design
Key Technical Parameters
Drain-Source Voltage (VDS): 60 V
Gate-Source Voltage (VGS): ±16 V
On-Resistance (RDS(on)): 4.6 mΩ @ 90 A, 10 V
Continuous Drain Current (ID): 90 A at 25°C
Input Capacitance (Ciss): 8,180 pF @ 25 V
Power Dissipation (Pd): 107 W at 25°C
Quality and Safety Features
Robust and reliable MOSFET design
Certified to meet industry safety standards
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Electric vehicles
Product Lifecycle
This product is currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable high-temperature operation
Compact and efficient package design
Robust and reliable MOSFET construction
Compatibility with a wide range of power electronics applications
