Manufacturer Part Number
IPD70N10S3L12ATMA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-channel MOSFET transistor from Infineon Technologies, part of the OptiMOS series.
Product Features and Performance
100V drain-source voltage
5 mOhm maximum on-resistance at 70A, 10V
70A continuous drain current at 25°C
5550 pF maximum input capacitance at 25V
125W maximum power dissipation at Tc
Product Advantages
Excellent efficiency and low power loss
High current handling capability
Compact surface-mount package
Key Technical Parameters
Vds: 100V
Vgs (Max): ±20V
Rds(on): 11.5 mOhm
Id (continuous): 70A
Ciss: 5550 pF
Power Dissipation: 125W
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
This MOSFET is suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial automation.
Application Areas
Power converters
Motor drives
Switch-mode power supplies
Industrial automation and control
Product Lifecycle
This product is currently in production and there are no indications of it being discontinued. Replacement or upgrade options may be available from Infineon.
Key Reasons to Choose This Product
Excellent efficiency and low power loss, leading to improved system performance
High current handling capability for demanding applications
Compact surface-mount package for easy integration
Reliable operation over a wide temperature range
RoHS compliance for environmental sustainability