Manufacturer Part Number
IPD70N12S3-11
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high switching speed, designed for automotive and industrial applications.
Product Features and Performance
Low on-resistance of 11.1 mOhm at 70A, 10V
High drain current capability of 70A (continuous at 25°C)
Wide operating temperature range of -55°C to 175°C
Fast switching with low gate charge of 65 nC at 10V
High drain-to-source voltage rating of 120V
Product Advantages
Excellent thermal management and power efficiency
Reliable performance in demanding automotive and industrial environments
Optimized for high-frequency, high-current switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 120V
Gate-to-Source Voltage (Vgs): ±20V
Input Capacitance (Ciss): 4355 pF at 25V
Power Dissipation (Tc): 125W
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS compliance (as applicable)
Compatibility
Suitable for surface mount technology (SMT) assembly
Application Areas
Automotive electronics (e.g., motor drives, power steering, transmission control)
Industrial power conversion (e.g., power supplies, inverters, motor drives)
Product Lifecycle
This product is an active and widely available offering from Infineon Technologies.
Replacement or upgrade options may be available from Infineon or other MOSFET manufacturers.
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power, high-frequency switching applications
Reliable operation in harsh automotive and industrial environments
Optimized design for easy integration and thermal management
Broad availability and long-term support from a leading semiconductor manufacturer
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