Manufacturer Part Number
IPD70N03S4L04ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low RDS(on) in a compact DPak package
Product Features and Performance
Low on-resistance (RDS(on) = 4.3 mΩ @ 70 A, 10 V)
High continuous drain current (ID = 70 A @ 25°C)
Wide operating temperature range (-55°C to 175°C)
High input capacitance (Ciss = 3300 pF @ 25 V)
Low gate charge (Qg = 48 nC @ 10 V)
Suitable for high-frequency switching applications
Product Advantages
Excellent thermal performance
Compact and efficient power management
Reliable and robust design
Optimized for high-power density applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
Gate-to-Source Voltage (VGS): ±16 V
Continuous Drain Current (ID): 70 A @ 25°C
Power Dissipation (PD): 68 W @ Tc
Input Capacitance (Ciss): 3300 pF @ 25 V
Gate Charge (Qg): 48 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Reliable and long-lasting performance
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial automation
Telecommunications equipment
Product Lifecycle
The IPD70N03S4L04ATMA1 is an actively supported product with no plans for discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Several Key Reasons to Choose This Product
Excellent thermal performance and power handling capabilities
Compact and efficient design for high-power density applications
Reliable and robust construction suitable for harsh environments
Optimized for high-frequency switching applications
Wide operating temperature range and RoHS3 compliance
