Manufacturer Part Number
IPD122N10N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor designed for power switching applications
Product Features and Performance
100V drain-source voltage rating
Low on-resistance of 12.2mΩ at 46A, 10V
High continuous drain current of 59A at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 2500pF at 50V
Maximum power dissipation of 94W at Tc
Product Advantages
Optimized for high efficiency and low switching losses
Suitable for high-power density designs
Robust and reliable performance in harsh environments
Key Technical Parameters
N-channel MOSFET
Vds: 100V
Vgs(max): ±20V
Rds(on) max: 12.2mΩ
Id continuous: 59A
Ciss max: 2500pF
Qg max: 35nC
Quality and Safety Features
RoHS3 compliant
PG-TO252-3 package for reliable surface mount assembly
Compatibility
Suitable for a wide range of power conversion and control applications, such as:
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Application Areas
Industrial
Consumer
Automotive
Product Lifecycle
This product is currently in production and not nearing discontinuation. Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power applications
Robust and reliable design for demanding environments
Optimized for high-power density and low switching losses
Wide operating temperature range and RoHS3 compliance
Compatibility with a variety of power conversion and control applications