Manufacturer Part Number
IPD110N12N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance MOSFET transistor optimized for power conversion applications
Product Features and Performance
N-channel MOSFET with low on-resistance
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge for efficient power conversion
Supports high continuous drain current of up to 75A
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal performance and reliability
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 120V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 11mΩ @ 75A, 10V
Input Capacitance (Ciss): 4310pF @ 60V
Power Dissipation (Tc): 136W
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
TO-252-3 (D-Pak) package
Application Areas
Power supplies
Motor drives
Lighting ballasts
Inverters
Solar power systems
Product Lifecycle
Currently in production
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent power conversion efficiency due to low on-resistance and fast switching
Wide operating temperature range for reliable performance in harsh environments
Compact surface mount package for space-constrained designs
Proven reliability and quality from Infineon Technologies