Manufacturer Part Number
IPD12CN10NG
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor for power electronic applications
Product Features and Performance
100V drain-source voltage
Low on-resistance of 12.4mΩ
High continuous drain current of 67A at 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge of 65nC at 10V
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal performance
Robust design for reliable operation
Key Technical Parameters
Vdss: 100V
Vgs(max): ±20V
Rds(on) max: 12.4mΩ
Id continuous at 25°C: 67A
Ciss max: 4320pF
Power dissipation max: 125W
Quality and Safety Features
Adherence to industry standards and safety regulations
Rigorous quality control and testing processes
Compatibility
Suitable for a wide range of power electronic applications, including motor drives, power supplies, and inverters
Application Areas
Industrial
Automotive
Telecommunications
Renewable energy systems
Product Lifecycle
Current product offering, no discontinuation plans
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and durability
Easy integration into power electronic systems
Broad compatibility and versatile application range