Manufacturer Part Number
IPD12CN10N
Manufacturer
Infineon Technologies
Introduction
The IPD12CN10N is a high-performance N-channel MOSFET transistor from Infineon Technologies, part of the OptiMOS series.
Product Features and Performance
100V drain-to-source voltage rating
Low on-resistance of 12.4 mOhm @ 67A, 10V
High current handling capability of 67A continuous drain current
Low input capacitance of 4320 pF
Wide operating temperature range of -55°C to 175°C
Low gate charge of 65 nC @ 10V
Product Advantages
Excellent power efficiency due to low on-resistance
High current capability in a compact TO-252-3 (D-Pak) package
Suitable for high-frequency, high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 67A
On-Resistance (Rds(on)): 12.4 mOhm
Input Capacitance (Ciss): 4320 pF
Power Dissipation (Tc): 125W
Quality and Safety Features
RoHS compliance (exemptions may apply)
AEC-Q101 qualified for automotive applications
Compatibility
Surface mount (SMD) package for easy PCB integration
Compatible with standard MOSFET driving circuitry
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and high current capability
Compact and easy-to-use TO-252-3 package
Suitable for a wide range of high-power, high-frequency switching applications
Proven reliability and quality from a leading semiconductor manufacturer
