Manufacturer Part Number
IPB073N15N5ATMA1
Manufacturer
Infineon Technologies
Introduction
Infineon's IPB073N15N5ATMA1 is a high-performance N-channel power MOSFET designed for use in a variety of power conversion and control applications.
Product Features and Performance
150V Drain-Source Voltage
114A Continuous Drain Current at 25°C
3mΩ Maximum On-Resistance at 10V Gate-Source Voltage
4700pF Maximum Input Capacitance at 75V Drain-Source Voltage
214W Maximum Power Dissipation at 25°C
Product Advantages
Optimized for high-efficiency power conversion
Excellent RDS(on) performance for low conduction losses
Low gate charge for fast switching
Wide operating temperature range of -55°C to 175°C
Key Technical Parameters
Drain-Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (RDS(on)): 7.3mΩ @ 57A, 10V
Continuous Drain Current (ID): 114A at 25°C
Input Capacitance (Ciss): 4700pF @ 75V
Power Dissipation (Ptot): 214W at 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
The IPB073N15N5ATMA1 is compatible with a wide range of power electronic applications, including but not limited to:
Switch-mode power supplies
Motor drives
Automotive electronics
Industrial automation and control
Application Areas
High-efficiency power conversion
High-current, high-voltage switching
Industrial and automotive power electronics
Product Lifecycle
The IPB073N15N5ATMA1 is an active product and is currently available. Infineon continues to support and manufacture this device, and there are no plans for discontinuation at this time.
Several Key Reasons to Choose This Product
Excellent on-resistance performance for low conduction losses
High current handling capability up to 114A
Wide operating temperature range of -55°C to 175°C
Fast switching with low gate charge
Designed and manufactured to high quality standards
Compatibility with a wide range of power electronic applications
IPB073N15N5INFINE0N