Manufacturer Part Number
IPB081N06L3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Optimized for high-frequency switching applications
Product Features and Performance
Excellent on-resistance (RDS(on)) of 8.1 mOhm @ 50 A, 10 V
Wide operating temperature range of -55°C to 175°C
Low gate charge (Qg) of 29 nC @ 4.5 V
High drain-to-source voltage (VDS) of 60 V
High continuous drain current (ID) of 50 A at 25°C
Product Advantages
Optimized for high-frequency switching
Improved energy efficiency
Reliable operation in harsh environments
Compact and space-saving package
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60 V
Gate-to-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 8.1 mOhm @ 50 A, 10 V
Continuous Drain Current (ID): 50 A at 25°C
Input Capacitance (Ciss): 4900 pF @ 30 V
Power Dissipation (Pd): 79 W at 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
Can be used in a wide range of power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
DC-DC converters
Lighting ballasts
Product Lifecycle
Current product offering
No plans for discontinuation or replacements announced
Key Reasons to Choose This Product
Excellent performance in high-frequency switching applications
Reliable and durable operation in harsh environments
Compact and space-saving package
Optimized for improved energy efficiency
Broad compatibility with various power electronic applications
IPB083N10N3G MOSIR