IPB06N03LA - Infineon Technologies

Manufacturer Part Number

IPB06N03LA

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss): 25 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30 A, 10 V

Current Continuous Drain (Id) @ 25°C: 50 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V

Power Dissipation (Max): 83 W (Tc)

Vgs(th) (Max) @ Id: 2 V @ 40 A

Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V

Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V

Product Advantages

Low on-resistance for high efficiency

High power handling capability

Wide operating temperature range

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Mounting Type: Surface Mount

Quality and Safety Features

RoHS non-compliant

Compatibility

Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB

Supplier Device Package: PG-TO263-3-2

Series: OptiMOS

Package: Tape & Reel (TR)

Application Areas

Suitable for a wide range of power conversion and control applications

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Several Key Reasons to Choose This Product

Excellent thermal performance and power handling capability

Low on-resistance for high efficiency

Wide operating temperature range

Suitable for various power conversion and control applications