Manufacturer Part Number
IPB065N15N3GATMA1
Manufacturer
Infineon Technologies
Introduction
The IPB065N15N3GATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for various power conversion and control applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 150V
Low on-resistance (Rds(on)) of 6.5mΩ @ 100A, 10V
High continuous drain current (Id) of 130A at 25°C
Wide operating temperature range of -55°C to 175°C
High power dissipation capability of 300W
Efficient switching performance with low gate charge (Qg) of 93nC @ 10V
Product Advantages
Excellent power handling and efficiency
Robust thermal management
Reliable and long-lasting operation
Suitable for high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
Gate to Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 6.5mΩ @ 100A, 10V
Continuous Drain Current (Id): 130A @ 25°C
Input Capacitance (Ciss): 7300pF @ 75V
Power Dissipation (Tc): 300W
Quality and Safety Features
RoHS3 compliant
Robust package design (TO-263-7, DPak)
Suitable for high-temperature operations
Compatibility
This MOSFET is compatible with a wide range of power electronic circuits and systems, including:
Switching power supplies
Motor drives
Inverters
Industrial automation and control systems
Application Areas
Power conversion and control
Industrial electronics
Renewable energy systems
Electric vehicles
Product Lifecycle
The IPB065N15N3GATMA1 is an active and widely available product from Infineon Technologies. There are no indications of it being discontinued, and replacements or upgrades may be available as technology evolves.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust thermal management for reliable operation
Wide operating temperature range for versatile applications
Efficient switching performance for improved system performance
Compatibility with a wide range of power electronic circuits and systems
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