Manufacturer Part Number
IPB072N15N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel OptiMOS MOSFET in a TO-263-3 package.
Product Features and Performance
Optimized for high-frequency, high-power, and high-efficiency applications
Low on-resistance (Rds(on)) down to 7.2 mOhm
High current capability up to 100A continuous drain current
Wide operating temperature range from -55°C to 175°C
Low input capacitance (Ciss) of 5470 pF
High power dissipation up to 300W
Product Advantages
Excellent efficiency and power density
Compact and robust design
Suitable for high-frequency, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs) Max: ±20V
Drain Current (Id) @ 25°C: 100A
On-Resistance (Rds(on)) @ 100A, 10V: 7.2 mOhm
Input Capacitance (Ciss) @ 75V: 5470 pF
Power Dissipation (Tc): 300W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Suitable for a wide range of high-power, high-frequency applications
Application Areas
Switching mode power supplies
Motor drives
Industrial automation
Renewable energy systems
Automotive electronics
Product Lifecycle
This is a current production product and is not nearing discontinuation.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent efficiency and power density for high-power, high-frequency applications
Compact and robust design for reliable performance
Wide operating temperature range for versatile use
Low on-resistance and high current capability for high-efficiency power conversion
Compatibility with a wide range of high-power applications
IPB072N15NINF