IGA03N120H2 - Infineon Technologies

Manufacturer Part Number

IGA03N120H2

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Single Transistor Insulated Gate Bipolar Transistor (IGBT)

Product Features and Performance

Operating Temperature: -40°C to 150°C (TJ)

Power Rating: 29 W

Collector-Emitter Breakdown Voltage: 1200 V

Collector Current (Max): 8.2 A

Collector-Emitter Saturation Voltage (Max): 2.8 V @ 15 V, 3 A

Gate Charge: 8.6 nC

Pulsed Collector Current: 9 A

Switching Energy: 140 μJ (on), 150 μJ (off)

Turn-on/Turn-off Delay Time: 9.2 ns / 281 ns

Product Advantages

High voltage and current handling capability

Low on-state voltage drop

Fast switching speed

Suitable for high-power applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 1200 V

Collector Current (Max): 8.2 A

Collector-Emitter Saturation Voltage (Max): 2.8 V

Switching Energy: 140 μJ (on), 150 μJ (off)

Turn-on/Turn-off Delay Time: 9.2 ns / 281 ns

Quality and Safety Features

Designed for high reliability and safety in power electronics applications

Meets industrial standards and safety requirements

Compatibility

Through-hole mounting

Suitable for a wide range of power electronics applications

Application Areas

Power conversion and control

Industrial motor drives

Renewable energy systems

Home appliances

Welding equipment

Product Lifecycle

Current product, no discontinuation plans

Replacement and upgrade options available

Key Reasons to Choose This Product

High voltage and current handling capability

Low on-state voltage drop for efficient power conversion

Fast switching speed for improved system performance

Suitable for a wide range of high-power applications

Designed for high reliability and safety

Available in standard through-hole package for easy integration