Manufacturer Part Number
CYDMX128B16-65BVXI
Manufacturer
Infineon Technologies
Introduction
The CYDMX128B16-65BVXI is a high-performance, low-power dual-port SRAM (SRAM - MoBL) memory chip from Infineon Technologies. This product offers a memory capacity of 128Kbit organized as 8K x 16 bits and features a parallel memory interface with a maximum access time of 65 nanoseconds.
Product Features and Performance
128Kbit of SRAM memory organized as 8K x 16 bits
Dual-port SRAM (SRAM MoBL) technology
Parallel memory interface
Maximum access time of 65 nanoseconds
Operating voltage range of 1.8V to 3.3V
Wide operating temperature range of -40°C to 85°C
Product Advantages
Dual-port design allows simultaneous read and write operations for improved system performance
Low-power MoBL (Mobility Backbone Logic) technology for energy-efficient operation
Wide voltage and temperature ranges support a variety of applications
Key Reasons to Choose This Product
High-performance, low-power SRAM memory solution
Dual-port architecture for improved system throughput
Reliable and robust design for industrial and commercial applications
Backed by Infineon's reputation for quality and innovation
Quality and Safety Features
Manufactured using advanced semiconductor processes for reliable performance
Compliance with relevant industry standards and regulations
Compatibility
This SRAM memory chip is compatible with a wide range of electronic devices and systems that require high-speed, dual-port volatile memory.
Application Areas
The CYDMX128B16-65BVXI is suitable for a variety of applications, including:
Industrial automation and control systems
Networking and telecommunication equipment
Embedded systems and IoT devices
Medical equipment
Military and aerospace applications
Product Lifecycle
The CYDMX128B16-65BVXI is currently in the obsolete phase of its product lifecycle. Customers should contact our website's sales team for information on equivalent or alternative models that may be available.