CYDM256B16-55BVXI - Infineon Technologies

Manufacturer Part Number

CYDM256B16-55BVXI

Manufacturer

Infineon Technologies

Introduction

The CYDM256B16-55BVXI is a high-performance SRAM memory chip from Infineon Technologies' MoBL® series, provided in a 100-VFBGA package.

Product Features and Performance

High-speed access time of 55 ns

Dual Port, MoBL (More Battery Life) technology for improved power efficiency

Synchronous operation to optimize read/write cycles

Product Advantages

Fast read and write cycle time suitable for high-performance applications

Low standby current contributing to power savings

Dual port interface allows simultaneous read and write operations

Key Technical Parameters

Memory Type: Volatile SRAM

Memory Format: Dual Port, SRAM

Memory Size: 256Kbit

Memory Organization: 16K x 16

Write Cycle Time: 55ns

Access Time: 55 ns

Voltage Supply Range: 1.7V to 3.3V

Operating Temperature Range: -40°C to 85°C

Mounting Type: Surface Mount

Quality and Safety Features

Extended temperature range for reliability in harsh environments

Thoroughly tested to meet Infineon Technologies' rigorous quality standards

Compatibility

Supports parallel memory interface for broad compatibility with microcontrollers and processors

Application Areas

Telecommunications

Networking

Embedded systems where dual port SRAM is required

Industrial control and automation

Product Lifecycle

Obsolete product status, suggesting that it is nearing discontinuation

Alternatives or upgrades may be available from Infineon Technologies for new designs

Several Key Reasons to Choose This Product

Optimized for low power consumption with MoBL technology

Ability to perform read and write operations simultaneously due to dual-port access

Robust for industrial applications given the operating temperature range

Adequate for applications requiring quick memory access with fast cycle times

Memory density suitable for various embedded applications