Manufacturer Part Number
CYDM064B16-55BVXI
Manufacturer
Infineon Technologies
Introduction
High-performance dual-port SRAM with low power consumption
Designed for advanced embedded systems and IoT applications
Product Features and Performance
Volatile SRAM memory with 64Kbit capacity
Parallel memory interface with 55ns access time
Supports 1.7V-1.9V, 2.4V-2.6V, and 2.7V-3.3V supply voltages
Low power consumption with MoBL (Mobility optimized Bipolar Logic) technology
Operating temperature range of -40°C to 85°C
Product Advantages
High-speed performance with fast access time
Wide voltage range for flexibility in power supply
Low power consumption for extended battery life
Wide operating temperature range for industrial applications
Key Technical Parameters
Memory capacity: 64Kbit
Memory organization: 4K x 16
Memory type: Volatile SRAM
Memory interface: Parallel
Access time: 55ns
Write cycle time (word, page): 55ns
Supply voltage: 1.7V-1.9V, 2.4V-2.6V, 2.7V-3.3V
Quality and Safety Features
RoHS3 compliant
100-VFBGA (6x6) package
Compatibility
Surface mount package for easy integration
Application Areas
Embedded systems
Internet of Things (IoT) devices
Industrial automation
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
High-performance dual-port SRAM with low power consumption
Wide voltage range and operating temperature support
Compact 100-VFBGA (6x6) package for space-constrained designs
Proven reliability and quality from Infineon Technologies
Suitable for a wide range of embedded and IoT applications