Manufacturer Part Number
CYDM128B16-55BVXI
Manufacturer
Infineon Technologies
Introduction
Infineon's CYDM128B16-55BVXI is a high-performance, low-power dual-port SRAM (Static Random Access Memory) device designed for various embedded applications.
Product Features and Performance
128Kbit of on-chip SRAM memory
Dual-port architecture for concurrent read and write operations
Fast access time of 55ns
Low operating voltage range of 1.7V to 3.3V
Wide operating temperature range of -40°C to 85°C
Advanced MoBL (Mobility Optimized Bit Line) technology for low power consumption
Parallel memory interface
Product Advantages
Dual-port design enables efficient data transfer and processing
Fast access time and low power consumption suitable for high-performance embedded systems
Wide voltage and temperature range for versatile applications
Key Technical Parameters
Memory Size: 128Kbit
Access Time: 55ns
Memory Organization: 8K x 16
Supply Voltage: 1.7V to 3.3V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
100-VFBGA (6x6) package for surface mount assembly
Compatibility
The CYDM128B16-55BVXI is compatible with a variety of embedded systems and can be used in a wide range of applications.
Application Areas
Industrial automation and control systems
Automotive electronics
Consumer electronics
Telecommunications equipment
Medical devices
Product Lifecycle
The CYDM128B16-55BVXI is an active product and is currently available for purchase. Infineon provides support and availability for this product.
Several Key Reasons to Choose This Product
Dual-port SRAM architecture for efficient data transfer and processing
Fast access time and low power consumption for high-performance applications
Wide operating voltage and temperature range for versatile use
Compact 100-VFBGA (6x6) package for space-constrained designs
RoHS3 compliance for environmentally-friendly applications
Backed by Infineon's reputation for quality and reliability in the semiconductor industry