Manufacturer Part Number
BSZ900N20NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET with low on-resistance designed for power management and motor control applications.
Product Features and Performance
Extremely low on-resistance of 90 mΩ at 7.6 A and 10 V
High current capability of 15.2 A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 920 pF at 100 V
Maximum power dissipation of 62.5 W at Tc
Product Advantages
Optimized for high-efficiency power conversion
Enables compact and efficient power supply designs
Suitable for a wide range of industrial and consumer applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 200 V
Gate-Source Voltage (Vgs) Max: ±20 V
Threshold Voltage (Vgs(th)) Max: 4 V at 30 A
Drive Voltage Range: 10 V
Gate Charge (Qg) Max: 11.6 nC at 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for use in safety-critical applications
Compatibility
Surface mount package (PG-TSDSON-8)
Compatible with standard MOSFET drive circuits
Application Areas
Power supplies
Motor drives
Industrial automation
Household appliances
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density
Reliable performance across a wide temperature range
Proven Infineon quality and safety
Compatibility with standard MOSFET drive circuits
Suitability for a wide range of industrial and consumer applications
