Manufacturer Part Number
BSZ440N10NS3GATMA1
Manufacturer
Infineon Technologies
Introduction
High performance, N-channel MOSFET transistor with high current capability and low on-resistance.
Product Features and Performance
100V drain-source voltage
44mΩ on-resistance at 12A, 10V
3A continuous drain current at 25°C
18A continuous drain current at 100°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 9.1nC at 10V
Compact 8-PowerTDFN surface mount package
Product Advantages
Excellent efficiency and thermal performance
Reliable high current switching
Compact and space-saving design
Wide temperature range for versatile applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 44mΩ @ 12A, 10V
Drain Current (Id): 5.3A (Ta), 18A (Tc)
Input Capacitance (Ciss): 640pF @ 50V
Power Dissipation (Ptot): 29W (Tc)
Quality and Safety Features
RoHS3 compliant
Provided in Tape & Reel packaging for automated assembly
Compatibility
Suitable for high current switching applications in power supplies, motor drives, and industrial electronics
Application Areas
Power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
Current production part, no discontinuation expected
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power switching
Compact and space-saving package for design flexibility
Wide operating temperature range for reliable performance in diverse environments
Proven quality and safety features for industrial and automotive applications
