Manufacturer Part Number
BSZ180P03NS3EGATMA1
Manufacturer
Infineon Technologies
Introduction
Infineon's BSZ180P03NS3EGATMA1 is a high-performance P-Channel MOSFET designed for power switching and control applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 18 mΩ
High current capability of 9A (Ta) and 39.5A (Tc)
Fast switching with low gate charge of 30 nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency and thermal performance
Suitable for high-frequency and high-current applications
Robust and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (RDS(on)): 18 mΩ @ 20A, 10V
Input Capacitance (Ciss): 2220 pF @ 15V
Power Dissipation: 2.1W (Ta), 40W (Tc)
Quality and Safety Features
RoHS3 compliant
Rigorous quality control and testing
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in production and widely available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current capability and fast switching
Robust and reliable design
Wide operating temperature range
RoHS3 compliance for safety and environmental sustainability
