Manufacturer Part Number
BSZ22DN20NS3G
Manufacturer
Infineon Technologies
Introduction
The BSZ22DN20NS3G is a high-performance N-Channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
200V Drain-to-Source Voltage
225mΩ Maximum On-Resistance at 3.5A, 10V
7A Continuous Drain Current at 25°C
430pF Maximum Input Capacitance at 100V
34W Maximum Power Dissipation
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for improved efficiency
High voltage rating for versatile applications
Surface mount package for compact designs
Suitable for high-frequency switching applications
Key Technical Parameters
N-Channel MOSFET
200V Drain-to-Source Voltage
225mΩ Maximum On-Resistance
7A Continuous Drain Current
430pF Maximum Input Capacitance
Quality and Safety Features
Robust design for reliable performance
Compliance with industry safety standards
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Lighting controls
Industrial automation
Automotive electronics
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Compact surface mount package
Reliable and robust design
Suitable for high-frequency switching applications
Wide operating temperature range
