Manufacturer Part Number
BSZ058N03LSGATMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
RoHS3 Compliant
Surface Mount Packaging (PG-TSDSON-8)
OptiMOS Series
Operating Temperature Range: -55°C to 150°C
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)) Max: 5.8mΩ @ 20A, 10V
MOSFET Technology
Continuous Drain Current (Id) Max: 15A (Ta), 40A (Tc)
Input Capacitance (Ciss) Max: 2400pF @ 15V
Power Dissipation Max: 2.1W (Ta), 45W (Tc)
N-Channel FET Type
Threshold Voltage (Vgs(th)) Max: 2.2V @ 250A
Drive Voltage Range: 4.5V (Max Rds(on)), 10V (Min Rds(on))
Gate Charge (Qg) Max: 30nC @ 10V
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Wide operating temperature range
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss)
Gate-Source Voltage (Vgs)
On-Resistance (Rds(on))
Continuous Drain Current (Id)
Input Capacitance (Ciss)
Power Dissipation
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various electronic circuits and systems requiring high-performance power switching
Application Areas
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Current production model, no known discontinuation plans
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose
Excellent efficiency and power handling
Wide operating temperature range
Compact and reliable surface mount package
Proven performance in various power electronics applications