Manufacturer Part Number
BSZ060NE2LSATMA1
Manufacturer
Infineon Technologies
Introduction
The BSZ060NE2LSATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies' OptiMOS series.
Product Features and Performance
25V drain-source voltage (Vdss)
6mΩ maximum on-resistance (Rds(on)) at 20A, 10V
670pF maximum input capacitance (Ciss) at 12V
1W maximum power dissipation at 25°C (Ta), 26W at 25°C (Tc)
Operates in the temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Compact surface mount package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-source voltage (Vdss): 25V
Gate-source voltage (Vgs): ±20V
Continuous drain current (Id): 12A at 25°C (Ta), 40A at 25°C (Tc)
On-resistance (Rds(on)): 6mΩ at 20A, 10V
Input capacitance (Ciss): 670pF at 12V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature, high-frequency operation
Compatibility
Compatible with various high-frequency power conversion and switching applications
Application Areas
Switch-mode power supplies
Motor drives
DC-DC converters
Inverters
Lighting ballasts
Product Lifecycle
Currently in active production
No known discontinuation plans
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Exceptional power efficiency due to low on-resistance
High current handling capability for demanding applications
Compact surface mount package for space-constrained designs
Proven reliability and performance in high-frequency, high-temperature operations
Compatibility with a wide range of power conversion and switching applications
