Manufacturer Part Number
BSZ058N03MSG
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Single Transistor MOSFET
Product Features and Performance
N-Channel MOSFET
OptiMOS 3 series
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)): 5mΩ @ 20A, 10V
Continuous Drain Current (Id): 14A (Ta), 40A (Tc)
Input Capacitance (Ciss): 3100pF @ 15V
Power Dissipation: 2.1W (Ta), 45W (Tc)
Threshold Voltage (Vgs(th)): 2V @ 250A
Drive Voltage Range: 4.5V to 10V
Gate Charge (Qg): 40nC @ 10V
Operating Temperature: -55°C to 150°C (TJ)
Product Advantages
Optimized for high efficiency power supplies
Low on-resistance for improved efficiency
Compact 8-PowerTDFN package for high power density
Key Technical Parameters
MOSFET Technology: Metal Oxide
Package: 8-PowerTDFN (PG-TSDSON-8)
Mounting Type: Surface Mount
Quality and Safety Features
Reliable Infineon manufacturing processes
Designed to meet safety and quality standards
Compatibility
Suitable for various power conversion applications
Application Areas
Power supplies
DC-DC converters
Motor drives
Industrial electronics
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
Optimal efficiency through low on-resistance
Compact, high-power density package
Reliable performance across wide temperature range
Compatibility with diverse power conversion applications