Manufacturer Part Number
BSZ0506NSATMA1
Manufacturer
Infineon Technologies
Introduction
High performance N-channel MOSFET in compact 8-PowerTDFN package for efficient power conversion applications.
Product Features and Performance
Low on-resistance (Rds(on)) of 4.4 mΩ at 20 A, 10 V
High current capability up to 40 A
Low gate charge (Qg) of 15 nC at 10 V
Wide operating temperature range of -55°C to 150°C
Optimized for high-frequency, high-efficiency power conversion
Product Advantages
Excellent thermal performance with low junction-to-case thermal resistance
Compact package for space-constrained designs
Optimized for high-frequency switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 15 A (Ta), 40 A (Tc)
Input Capacitance (Ciss): 950 pF @ 15 V
Power Dissipation: 2.1 W (Ta), 27 W (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Suitable for a wide range of power conversion applications, including DC-DC converters, motor drives, and power supplies
Application Areas
High-frequency, high-efficiency power conversion
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
This product is currently in production and has no known plans for discontinuation.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance and gate charge
Compact and thermally efficient package for space-constrained designs
Broad operating temperature range and high reliability for demanding applications
Optimized for high-frequency switching, enabling high-efficiency power conversion
